Critical thickness for interface misfit dislocation formation in two-dimensional materials
نویسندگان
چکیده
منابع مشابه
Thickness identification of two-dimensional materials by optical imaging.
Two-dimensional materials, e.g. graphene and molybdenum disulfide (MoS(2)), have attracted great interest in recent years. Identification of the thickness of two-dimensional materials will improve our understanding of their thickness-dependent properties, and also help with scientific research and applications. In this paper, we propose to use optical imaging as a simple, quantitative and unive...
متن کاملSimple model for interface stresses with application to misfit dislocation generation in epitaxial thin films
A simple model for the interfacial free energy of a semicoherent interface is used to develop expressions for interface stresses, which are surface thermodynamic quantities associated with solid–solid interfaces. An analysis of the thermodynamics of thin film epitaxy is presented that incorporates the effects of free surface and interface stresses, and an expression for the critical thickness f...
متن کاملCondensation of two-dimensional oxide-interfacial charges into one-dimensional electron chains by the misfit-dislocation strain field.
The success of semiconductor technology is largely ascribed to controlled impacts of strains and defects on the two-dimensional interfacial charges. Interfacial charges also appear in oxide heterojunctions such as LaAlO3/SrTiO3 and (Nd0.35Sr0.65)MnO3/SrTiO3. How the localized strain field of one-dimensional misfit dislocations, defects resulting from the intrinsic misfit strains, would affect t...
متن کاملMisfit-dislocation-mediated heteroepitaxial island diffusion
a r t i c l e i n f o Scanning tunneling microscopy combined with molecular dynamics simulations reveals a dislocation-mediated island diffusion mechanism for Cu on Ag(111), a highly mismatched system. Cluster motion is tracked with atomic precision at multiple temperatures and diffusion barriers and prefactors are determined from direct measurements of hop rates. The barrier to nucleate a disl...
متن کاملInterface-driven formation of a two-dimensional dodecagonal fullerene quasicrystal
Since their discovery, quasicrystals have attracted continuous research interest due to their unique structural and physical properties. Recently, it was demonstrated that dodecagonal quasicrystals could be used as bandgap materials in next-generation photonic devices. However, a full understanding of the formation mechanism of quasicrystals is necessary to control their physical properties. He...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.214103